Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer
نویسندگان
چکیده
منابع مشابه
A High-Efficiency Transmission-Line GaN HEMT Class E Power Amplifier
In modern wireless communication systems it is required that the power amplifier could operate with high efficiency, high linearity, and low harmonic output level simultaneously. To increase efficiency of the power amplifier, a switching-mode Class E mode technique can be applied. This kind of a power amplifier requires an operation in saturation mode resulting in a poor linearity, and therefor...
متن کاملWATT GAN HEMT POWER AMPLIFIER FOR LTE 5 Watt GaN HEMT Power Amplifier for LTE
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is...
متن کاملDesign of multi-band multi-section transmission line transformer using particle swarm optimization
The design of Nt -section matching transformer operating at Nt arbitrary frequencies using the particle swarm optimization (PSO) method is presented. Although analytical methods based on standard transmission line theory can be used in such designs, however, the analysis becomes cumbersome if Nt exceeds two, and numerical methods should be used to solve the resulting nonlinear equations. The de...
متن کاملHigh bandwidth transimpedance amplifier design using active transmission lines
A transimpedance amplifier (TIA) is designed based on the first order wave equation. The feedback resistance is set as the ohJective function for transimpedance. The main feedback amplifier provides transimpedance and a wide band compensation amplifier determines the characteristics of overall TIA. The stability of lhe T lA is not affected due to the open loop nature of compensation. Simulation...
متن کاملA W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm
A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Microwave and Wireless Technologies
سال: 2017
ISSN: 1759-0787,1759-0795
DOI: 10.1017/s1759078717000125